KNOCH, Joachim

Appointments

1998 – 2001                      Research Scientist, Institute of Physics 2, RWTH Aachen University, Aachen, Germany, Prof. B. Lengeler
2001 – 2002  Postdoc researcher, Microsystems Technology Laboratory, Massachusetts Institute of Technology, Cambridge, USA,
Prof. J.A. del Alamo
2003 – 2006 Research Scientist, Institute of Bio- and Nanosystems, Forschungszentrum Jülich, Jülich, Germany, Prof. S. Mantl
2006 – 2008 Research Staff Member, IBM Zurich Research Laboratory, Rüschlikon, Switzerland
2008 – 2011 Associate Professor (W2) for Micro- and Nanoelectronics Devices, TU Dortmund University, Dortmund, Germany
2011 – present Director of the Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

 

Academic Qualification and Education

1998         Diploma in Solid State Physics, RWTH Aachen University, Germany 
2001 Doctor of natural sciences, RWTH Aachen University, Germany 
2008  Associate Professor at TU Dortmund University 
2011 Full Professor at RWTH Aachen University 

 

Teaching Experience

  • Micro- and Nanoelectronics Devices (Winter Semester 2008-2011), B.Sc. Level.
  • Semiconductor Technology (Summer Semester, 2008-2011), M.Sc. Level.
  • Nanoelectronics Devices (Winter Semesters, since 2011, M.Sc. Level.
  • Solid State Technology (Winter Semester, since 2011), M.Sc. Level
  • Quantum Simulations of Carbon Nanotube and Graphene Nanoribbon Field-Effect Transistors (Summer Semesters, since 2011), M.Sc. Level.
  • Fabrication and Characterization of Nanoelectronics Devices (Summer Semesters, since 2011), M.Sc. Level.

Honors, Awards, Scholarships and Other Appointments (Selection)

  • Expert for the German Research Council, the German Ministry for Education and Research, the European Committee and other German and European Research organizations
  • Reviewer for different IEEE journals, Appl. Phys. Lett., J. Appl. Phys, Nature Journals (Nat. Comm., Nat. Nanotechnol., Sci. Report )
  • Associate Editor for IEEE Transactions on Electron Devices
  • Member in Program Committees of different national and international conferences like „International Electron Devices Meeting“, “European Solid-State Device Research Conference”, “Silicon Nanowire Workshop”
  • Technical Program Chair of the “European Solid-State Device Research Conference” 2018 in Dresden
  • Borchers-Plakette 2001 (RWTH Aachen University), IBM Technical Achievement Award 2009

Research Topics

Micro- and Nanoelectronics with focus on low power devices in silicon III-V and 2D materials as well as photovoltaics.

Key Publications

  1. F. Riederer, T. Grap, S. Fischer, M.R. Müller, D. Yamaoka, C. Gupta, K. Kallis and J. Knoch, „Alternatives for doping in nanoscale field-effect transistors“, invited feature article, phys. stat. sol. a,  215(7), 1700969 (2018).
  2. M. Mueller, R. Salazar, S. Fathipour, H. Xu, U. Kuenzelmann, K.T. Kallis, A. Seabaugh, J. Appenzeller and J. Knoch, „Tunable WSe2 transistors using a buried triple-gate structure“, Nanoscale Res. Lett., 11, 512 (2016).
  3. J. Knoch, „Nanowire tunneling field-effect transistors“, Semicond. Semimetals, 94, 273-295 (2016).
  4. M.R. Mueller, A. Gumprich, E. Ecik, K.T. Kallis, F. Winkler, B. Kardynal, I. Petrov, U. Kunze and J. Knoch, „Visibility of two-dimensional layered materials on various substrates“, J. Appl. Phys., 118, 145305 (2015).
  5. J. Knoch and M. Müller, „Electrostatic doping - controlling the properties of carbon-based FETs with gates“, IEEE Trans. Nanotechnol., 13(6), 1044-1052 (2014).
  6. J. Knoch, Z. Chen and J. Appenzeller, „Properties of metal-graphene contacts“, IEEE Trans. Nanotechnol., 11, 513-519 (2012).
  7. J. Knoch and J. Appenzeller, „Modeling of high-performance p-type III–V heterojunction tunnel FETs“, IEEE Electron Dev. Lett., 31(4), 305 (2010).
  8. M.T. Björk, H. Schmid, J. Knoch, H. Riel and W. Riess, „Dopant deactivation in silicon nanostructures“, Nature Nanotech., 4, 103-107 (2009).
  9. J. Appenzeller, J. Knoch, M.T. Björk, H. Riel, H. Schmid and W. Riess, „Towards nanowire electronics“, invited feature article, IEEE Trans. Electron Dev. and Trans. Nanotechnol., 55(11), 2827-2845 (2008).
  10. J. Appenzeller, Y.-M. Lin, J. Knoch and Ph. Avouris, „Band-to-band tunneling in carbon nanotube field-effect transistors“, Phys. Rev. Lett., 93(19), 196805-1-4 (2004).